AP9T18GH替換型號DB008NG，完全兼容AP9T18GH，可用于數(shù)碼產(chǎn)品鋰電池保護等

型號：DB008NG

N管

電壓電流：20V45A

內(nèi)阻：RDS(ON)< 8mΩ@VGS=4.5V

封裝：TO-252

應(yīng)用：數(shù)碼產(chǎn)品鋰電池保護

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.?

Features：

1) VDS=20V,ID=45A,RDS(ON)< 8mΩ@VGS=4.5V

2) Low gate charge.?

3) Green device available.?

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).?

5) Excellent package for good heat dissipation.