MSN0230D替代型號DB007NG，P TO P兼容替代MSN0230D

型號：DB007NG

電壓電流：20V50A

內(nèi)阻：RDS(ON)<6.5mΩ@VGS=4.5V

N管

封裝：TO-252

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.?

Features：

1) VDS=20V,ID=55A,RDS(ON)<6.5mΩ@VGS=4.5V

2) Low gate charge.?

3) Green device available.?

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).?

5) Excellent package for good heat dissipation.